Project Research Associate Shohei Kumagai, Associate Professor Shun Watanabe and Professor Jun Takeya of the Department of Advanced Materials Science in the Graduate School of Frontier Sciences led the research project.

Abstruct

Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements. However, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS onto the same substrates. Here, we report a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from a materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with a short propagation delay of 1.3 µs per stage.

Article

Publication:
Communications Materials

Title:
High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors

Authors:
Xiaozhu Wei, Shohei Kumagai, Tatsuyuki Makita, Kotaro Tsuzuku, Akifumi Yamamura, Mari Sasaki, Shun Watanabe, Jun Takeya

DOI: 10.1038/s43246-023-00331-0

URL:
https://www.nature.com/articles/s43246-023-00331-0